BC337-16 / BC337-25
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
BC337-16
BC337-25
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced from
Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
45
V
V
CES
Collector-Base Voltage
50
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
BC337-16 / BC337-25
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
E
B
C
TO-92
1997 Fairchild Semiconductor Corporation
33716-25, Rev B
BC337-16 / BC337-25
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Em itter Breakdown
Voltage
I
C
= 10 m A, I
B
= 0
45
V
V
(BR)CES
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
50
V
V
(BR)EBO
Em itter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 20 V, I
E
= 0, T
A
= +25
C
V
CB
= 20 V, I
E
= 0, T
A
= +150
C
100
5.0
nA
A
I
EBO
Em itter Cutoff Current
V
EB
= 5.0 V, I
C
= 0
10
A
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 100 mA
337-16
337-25
V
CE
= 1.0 V, I
C
= 500 mA
100
160
40
250
400
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA
0.7
V
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 1.0 V, I
C
= 500 mA
1.2
V
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